Part Details for IPD038N06N3G by Infineon Technologies AG
Overview of IPD038N06N3G by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Price & Stock for IPD038N06N3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
23AK3486
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Newark | Power Field-Effect Transistor, 90A I(D), 60V, 0.0038Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-252Aa |Infineon IPD038N06N3G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.8100 / $5.4300 | Buy Now |
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Chip1Cloud | MOSFET N-CH 60V 90A TO252-3 | 48600 |
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RFQ | |
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LCSC | 60V 90A 188W 3.8m10V90A 4V90uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS | 857 |
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$0.7410 / $1.2496 | Buy Now |
Part Details for IPD038N06N3G
IPD038N06N3G CAD Models
IPD038N06N3G Part Data Attributes:
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IPD038N06N3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD038N06N3G
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 165 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 188 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |