Part Details for IPD088N06N3GATMA1 by Infineon Technologies AG
Overview of IPD088N06N3GATMA1 by Infineon Technologies AG
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- Part Data Attributes
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Price & Stock for IPD088N06N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPD088N06N3GATMA1TR-ND
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DigiKey | MOSFET N-CH 60V 50A TO252-3 Min Qty: 2500 Lead time: 22 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4058 / $0.4467 | Buy Now |
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DISTI #
IPD088N06N3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD088N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3645 / $0.4455 | Buy Now |
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DISTI #
726-IPD088N06N3GATMA
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Mouser Electronics | MOSFET TRENCH 40<-<100V RoHS: Compliant | 0 |
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$0.4050 / $0.4460 | Order Now |
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DISTI #
IPD088N06N3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD088N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.3645 / $0.4455 | Buy Now |
|
DISTI #
IPD088N06N3GATMA1
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD088N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3645 / $0.4455 | Buy Now |
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DISTI #
SP005559926
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EBV Elektronik | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount (Alt: SP005559926) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD088N06N3GATMA1
IPD088N06N3GATMA1 CAD Models
IPD088N06N3GATMA1 Part Data Attributes
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IPD088N06N3GATMA1
Infineon Technologies AG
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Datasheet
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IPD088N06N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| Avalanche Energy Rating (Eas) | 43 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 71 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |