Part Details for IPD088N06N3GBTMA1 by Infineon Technologies AG
Overview of IPD088N06N3GBTMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPD088N06N3GBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y2024
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Newark | Mosfet Transistor, N Channel, 50 A, 60 V, 0.0071 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IPD088N06N3GBTMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.2300 / $1.7600 | Buy Now |
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DISTI #
IPD088N06N3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD088N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3645 / $0.4455 | Buy Now |
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DISTI #
IPD088N06N3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD088N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3645 / $0.4455 | Buy Now |
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DISTI #
IPD088N06N3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD088N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3645 / $0.4455 | Buy Now |
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DISTI #
2480819RL
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element14 Asia-Pacific | MOSFET, N-CH, 60V, 50A, TO-252-3 RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.4976 / $0.7486 | Buy Now |
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DISTI #
2480819
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element14 Asia-Pacific | MOSFET, N-CH, 60V, 50A, TO-252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.4976 / $1.1082 | Buy Now |
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DISTI #
2480819
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Farnell | MOSFET, N-CH, 60V, 50A, TO-252-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.9996 / $1.9209 | Buy Now |
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DISTI #
2480819RL
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Farnell | MOSFET, N-CH, 60V, 50A, TO-252-3 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 0 |
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$0.9996 / $1.2006 | Buy Now |
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LCSC | 60V 50A 8.8m50A10V 71W 4V34uA 1PCSNChannel TO-252-3 MOSFETs ROHS | 4 |
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$0.8782 / $1.4160 | Buy Now |
Part Details for IPD088N06N3GBTMA1
IPD088N06N3GBTMA1 CAD Models
IPD088N06N3GBTMA1 Part Data Attributes
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IPD088N06N3GBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD088N06N3GBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 43 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD088N06N3GBTMA1
This table gives cross-reference parts and alternative options found for IPD088N06N3GBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD088N06N3GBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD160N04LG | Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD088N06N3GBTMA1 vs IPD160N04LG |
| IPD160N04LGBTMA1 | Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD088N06N3GBTMA1 vs IPD160N04LGBTMA1 |
| IPD170N04NG | Power Field-Effect Transistor, 30A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD088N06N3GBTMA1 vs IPD170N04NG |