Part Details for IPD15N06S2L64ATMA1 by Infineon Technologies AG
Overview of IPD15N06S2L64ATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD15N06S2L64ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
IPD15N06S2L64ATMA1
|
Avnet Americas | Trans MOSFET N-CH 55V 19A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD15N06S2L64ATMA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 300 Partner Stock |
|
RFQ | |
|
Rochester Electronics | IPD15N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 300 |
|
$0.2107 / $0.2479 | Buy Now |
Part Details for IPD15N06S2L64ATMA1
IPD15N06S2L64ATMA1 CAD Models
IPD15N06S2L64ATMA1 Part Data Attributes
|
IPD15N06S2L64ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD15N06S2L64ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 43 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 76 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |