Datasheets
IPD180N10N3G by: Infineon Technologies AG

Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Part Details for IPD180N10N3G by Infineon Technologies AG

Overview of IPD180N10N3G by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPD180N10N3G

Part # Distributor Description Stock Price Buy
DISTI # SP000482438
EBV Elektronik Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 (Alt: SP000482438) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 3 Days EBV - 0
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Part Details for IPD180N10N3G

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IPD180N10N3G Part Data Attributes

IPD180N10N3G Infineon Technologies AG
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IPD180N10N3G Infineon Technologies AG Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 43 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 172 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD180N10N3G

This table gives cross-reference parts and alternative options found for IPD180N10N3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD180N10N3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD50N10S3L-16 Power Field-Effect Transistor, 50A I(D), 100V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPD180N10N3G vs IPD50N10S3L-16
PSMN021-100YLX PSMN021-100YL - N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin Nexperia IPD180N10N3G vs PSMN021-100YLX
STD45N10F7 N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package STMicroelectronics IPD180N10N3G vs STD45N10F7
IPB50N10S3L-16 Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPD180N10N3G vs IPB50N10S3L-16
IPD50N10S3L16ATMA1 Power Field-Effect Transistor, 50A I(D), 100V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPD180N10N3G vs IPD50N10S3L16ATMA1
IPD180N10N3GATMA1 Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD180N10N3G vs IPD180N10N3GATMA1
SSD50N10-18D Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, MINIATURE, DPAK-3/2 Secos Corporation IPD180N10N3G vs SSD50N10-18D
IPD180N10N3GBTMA1 Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD180N10N3G vs IPD180N10N3GBTMA1
STP40NF10 N-Channel 100V - 0.024Ohm - 50A - TO-220 LOW GATE CHARGE StripFET II MOSFET STMicroelectronics IPD180N10N3G vs STP40NF10
STP45N10F7 N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in TO-220 package STMicroelectronics IPD180N10N3G vs STP45N10F7

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