Part Details for IPD180N10N3G by Infineon Technologies AG
Overview of IPD180N10N3G by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPD180N10N3G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000482438
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EBV Elektronik | Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 (Alt: SP000482438) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 3 Days | EBV - 0 |
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Part Details for IPD180N10N3G
IPD180N10N3G CAD Models
IPD180N10N3G Part Data Attributes
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IPD180N10N3G
Infineon Technologies AG
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Datasheet
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IPD180N10N3G
Infineon Technologies AG
Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 43 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 71 W | |
Pulsed Drain Current-Max (IDM) | 172 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPD180N10N3G
This table gives cross-reference parts and alternative options found for IPD180N10N3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD180N10N3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD50N10S3L-16 | Power Field-Effect Transistor, 50A I(D), 100V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD180N10N3G vs IPD50N10S3L-16 |
PSMN021-100YLX | PSMN021-100YL - N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin | Nexperia | IPD180N10N3G vs PSMN021-100YLX |
STD45N10F7 | N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package | STMicroelectronics | IPD180N10N3G vs STD45N10F7 |
IPB50N10S3L-16 | Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPD180N10N3G vs IPB50N10S3L-16 |
IPD50N10S3L16ATMA1 | Power Field-Effect Transistor, 50A I(D), 100V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPD180N10N3G vs IPD50N10S3L16ATMA1 |
IPD180N10N3GATMA1 | Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD180N10N3G vs IPD180N10N3GATMA1 |
SSD50N10-18D | Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, MINIATURE, DPAK-3/2 | Secos Corporation | IPD180N10N3G vs SSD50N10-18D |
IPD180N10N3GBTMA1 | Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD180N10N3G vs IPD180N10N3GBTMA1 |
STP40NF10 | N-Channel 100V - 0.024Ohm - 50A - TO-220 LOW GATE CHARGE StripFET II MOSFET | STMicroelectronics | IPD180N10N3G vs STP40NF10 |
STP45N10F7 | N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in TO-220 package | STMicroelectronics | IPD180N10N3G vs STP45N10F7 |