Part Details for IPD30N06S223ATMA1 by Infineon Technologies AG
Overview of IPD30N06S223ATMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPD30N06S223ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD30N06S223ATMA1TR-ND
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DigiKey | MOSFET N-CH 55V 30A TO252-3 Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Part Details for IPD30N06S223ATMA1
IPD30N06S223ATMA1 CAD Models
IPD30N06S223ATMA1 Part Data Attributes:
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IPD30N06S223ATMA1
Infineon Technologies AG
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Datasheet
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IPD30N06S223ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |