Part Details for IPD50N04S308ATMA1 by Infineon Technologies AG
Overview of IPD50N04S308ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPD50N04S308ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPD50N04S308ATMA1-448-ND
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DigiKey | IPD50N04 - 20V-40V N-CHANNEL AUT Min Qty: 434 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
10744 In Stock |
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$0.6900 | Buy Now |
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DISTI #
IPD50N04S308ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 50A TO252-3 Min Qty: 2500 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.6005 / $0.6611 | Buy Now |
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DISTI #
IPD50N04S308ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50N04S308ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6473 / $0.7912 | Buy Now |
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Future Electronics | Single N-Channel 40 V 7.5 mOhm 27 nC OptiMOS™ Power Mosfet - TO-252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.7550 / $0.7800 | Buy Now |
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Rochester Electronics | IPD50N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 10744 |
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$0.5944 / $0.6993 | Buy Now |
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DISTI #
IPD50N04S308ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50N04S308ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6473 / $0.7912 | Buy Now |
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DISTI #
IPD50N04S308ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50N04S308ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6473 / $0.7912 | Buy Now |
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DISTI #
SP000261218
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EBV Elektronik | Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R (Alt: SP000261218) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 6 Days | EBV - 2500 |
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Buy Now | |
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New Advantage Corporation | TO252-3/MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.8985 | Buy Now |
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Perfect Parts Corporation | 2156099 |
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RFQ |
Part Details for IPD50N04S308ATMA1
IPD50N04S308ATMA1 CAD Models
IPD50N04S308ATMA1 Part Data Attributes
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IPD50N04S308ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD50N04S308ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 111 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50N04S308ATMA1
This table gives cross-reference parts and alternative options found for IPD50N04S308ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N04S308ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD50N04S4L08ATMA1 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPD50N04S308ATMA1 vs IPD50N04S4L08ATMA1 |