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Transistors / Power Field-Effect Transistors / IPD50N04S4-08
Datasheets
IPD50N04S4-08 by:

Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD50N04S4-08 by Infineon Technologies AG

Overview of IPD50N04S4-08 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPD50N04S4-08

Part # Distributor Description Stock Price Buy
DISTI # IPD50N04S408ATMA1
Avnet Americas Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N04S408ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4509
$0.4509 Buy Now
DISTI # 726-IPD50N04S4-08
Mouser Electronics MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 RoHS: Compliant 17122
  • 1 $0.9600
  • 10 $0.7920
  • 100 $0.6160
  • 500 $0.5220
  • 1,000 $0.4250
  • 2,500 $0.4010
  • 5,000 $0.3810
  • 10,000 $0.3640
$0.3640 / $0.9600 Buy Now
DISTI # 67609661
Verical Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 167 Package Multiple: 1 Date Code: 2201 Americas - 2500
  • 167 $0.4899
  • 250 $0.4702
  • 500 $0.4533
  • 1,000 $0.4385
  • 2,500 $0.4255
$0.4255 / $0.4899 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0079OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 2000
  • 1 $1.4000
  • 287 $0.5600
  • 1,430 $0.4900
$0.4900 / $1.4000 Buy Now
DISTI # IPD50N04S408ATMA1
Avnet Americas Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N04S408ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4509
$0.4509 Buy Now
DISTI # IPD50N04S408ATMA1
Avnet Americas Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N04S408ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4509
$0.4509 Buy Now
Chip 1 Exchange INSTOCK 20000
RFQ
Chip1Cloud OptiMOS-T2 Power-Transistor 11800
RFQ
Chips Pulse Industry Limited PG-TO252-3 MOSFET RoHS Purchase Online, Ship Immediately 2475
  • 30 $0.4325
  • 100 $0.3841
  • 500 $0.3559
  • 1,000 $0.3411
$0.3411 / $0.4325 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 2500
  • 1 $0.3800
  • 10 $0.3000
  • 50 $0.3000
  • 100 $0.2900
  • 500 $0.2800
  • 1,000 $0.2800
$0.2800 / $0.3800 Buy Now
LCSC TO-252 MOSFETs ROHS 2063
  • 1 $0.6416
  • 10 $0.5342
  • 30 $0.4805
  • 100 $0.4268
  • 500 $0.3954
  • 1,000 $0.3790
$0.3790 / $0.6416 Buy Now
Perfect Parts Corporation   16317
RFQ
Sense Electronic Company Limited TO-252 5000
RFQ

Part Details for IPD50N04S4-08

IPD50N04S4-08 CAD Models

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IPD50N04S4-08 Part Data Attributes

Parametric Data
IPD50N04S4-08 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD50N04S4-08 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 46 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD50N04S4-08

This table gives cross-reference parts and alternative options found for IPD50N04S4-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N04S4-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD50N04S4-08 50A, 40V, 0.0079ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 Rochester Electronics LLC IPD50N04S4-08 vs IPD50N04S4-08
Part Number Description Manufacturer Compare
IPD50N04S4-08 50A, 40V, 0.0079ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 Rochester Electronics LLC IPD50N04S4-08 vs IPD50N04S4-08

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