Part Details for IPD50N06S4L-12 by Infineon Technologies AG
Results Overview of IPD50N06S4L-12 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD50N06S4L-12 Information
IPD50N06S4L-12 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50N06S4L-12
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-IPD50N06S4L-12
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 18195 |
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RFQ | |
DISTI #
SP000476422
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EBV Elektronik | Trans MOSFET NCH 60V 50A 3Pin TO252 TR (Alt: SP000476422) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 1 N-channel TO-252-3 MOSFETs ROHS | 216 |
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$0.3409 / $0.6942 | Buy Now |
Part Details for IPD50N06S4L-12
IPD50N06S4L-12 CAD Models
IPD50N06S4L-12 Part Data Attributes
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IPD50N06S4L-12
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50N06S4L-12
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252 | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 33 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPD50N06S4L-12
This table gives cross-reference parts and alternative options found for IPD50N06S4L-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N06S4L-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPD90N04S6-07 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N06S4L-12 vs IPD90N04S6-07 |
IPD90N04S6-05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N06S4L-12 vs IPD90N04S6-05 |
IPD90N06S4L-03 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N06S4L-12 vs IPD90N06S4L-03 |
IPD30N06S4L-23 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N06S4L-12 vs IPD30N06S4L-23 |
IPD90N06S4L-05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N06S4L-12 vs IPD90N06S4L-05 |
IPD90N06S4L-06 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N06S4L-12 vs IPD90N06S4L-06 |