Part Details for IPD50N06S4L08ATMA1 by Infineon Technologies AG
Overview of IPD50N06S4L08ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPD50N06S4L08ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPD50N06S4L08ATMA1-ND
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DigiKey | MOSFET N-CH 60V 50A TO252-3 Min Qty: 831 Lead time: 39 Weeks Container: Bulk MARKETPLACE PRODUCT |
2268 In Stock |
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$0.3600 | Buy Now |
DISTI #
IPD50N06S4L08ATMA1TR-ND
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DigiKey | MOSFET N-CH 60V 50A TO252-3 Min Qty: 831 Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IPD50N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 2268 |
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$0.3099 / $0.3646 | Buy Now |
DISTI #
SP000374322
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EBV Elektronik | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: SP000374322) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 5 Days | EBV - 0 |
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Buy Now |
Part Details for IPD50N06S4L08ATMA1
IPD50N06S4L08ATMA1 CAD Models
IPD50N06S4L08ATMA1 Part Data Attributes
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IPD50N06S4L08ATMA1
Infineon Technologies AG
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Datasheet
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IPD50N06S4L08ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 87 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPD50N06S4L08ATMA1
This table gives cross-reference parts and alternative options found for IPD50N06S4L08ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N06S4L08ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD50N06S4L-08 | 50A, 60V, 0.0078ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 | Rochester Electronics LLC | IPD50N06S4L08ATMA1 vs IPD50N06S4L-08 |
IPD50N06S4L-08 | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD50N06S4L08ATMA1 vs IPD50N06S4L-08 |