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Part Details for IPD50N06S4L12ATMA2 by Infineon Technologies AG
Overview of IPD50N06S4L12ATMA2 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD50N06S4L12ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
43AC3269
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Newark | Mosfet, Aec-Q101, N-Ch, 60V, 50A, To-252, Msl:Msl 1 - Unlimited, Svhc:No Svhc (07-Jul-2017) Rohs Compliant: Yes |Infineon IPD50N06S4L12ATMA2 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3998 |
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$0.5410 / $1.1500 | Buy Now |
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DISTI #
86AK5212
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Newark | Mosfet, N-Ch, 60V, 50A, To-252 Rohs Compliant: Yes |Infineon IPD50N06S4L12ATMA2 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4460 / $0.4800 | Buy Now |
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DISTI #
IPD50N06S4L12ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L12ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Rochester Electronics | IPD50N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 41450 |
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$0.3181 / $0.3742 | Buy Now |
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DISTI #
IPD50N06S4L12
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TME | Transistor: N-MOSFET, OptiMOS™ T2, unipolar, 60V, 36A, 50W Min Qty: 1 | 2086 |
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$0.6000 / $1.2000 | Buy Now |
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DISTI #
SMC-IPD50N06S4L12ATMA2
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 2500 |
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RFQ | |
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DISTI #
C1S322001060901
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 2490 |
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$0.3960 / $1.2900 | Buy Now |
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DISTI #
SP001028640
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EBV Elektronik | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: SP001028640) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 60V 50A TO252-31 | 30000 |
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$0.4463 / $0.6694 | Buy Now |
Part Details for IPD50N06S4L12ATMA2
IPD50N06S4L12ATMA2 CAD Models
IPD50N06S4L12ATMA2 Part Data Attributes
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IPD50N06S4L12ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50N06S4L12ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50N06S4L12ATMA2
This table gives cross-reference parts and alternative options found for IPD50N06S4L12ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N06S4L12ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD127N06LGBTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | IPD50N06S4L12ATMA2 vs IPD127N06LGBTMA1 |