Part Details for IPD50P04P413ATMA1 by Infineon Technologies AG
Overview of IPD50P04P413ATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IPD50P04P413ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD50P04P413ATMA1CT-ND
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DigiKey | MOSFET P-CH 40V 50A TO252-3 Min Qty: 1 Lead time: 52 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Limited Supply - Call |
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$0.5155 / $1.3700 | Buy Now |
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Future Electronics | Single P-Channel 40 V 12.6 mOhm 39 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5300 / $0.5550 | Buy Now |
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Rochester Electronics | IPD50P04 - 20V-150V P-Channel Automotive MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 2485 |
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$0.5103 / $0.6003 | Buy Now |
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CHIPMALL.COM LIMITED | MOSFET P-CH 40V 50A TO252-3 | 2120 |
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$0.7039 | Buy Now |
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Win Source Electronics | MOSFET P-CH 40V 50A TO252-3 | 37126 |
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$1.2630 / $1.8940 | Buy Now |
Part Details for IPD50P04P413ATMA1
IPD50P04P413ATMA1 CAD Models
IPD50P04P413ATMA1 Part Data Attributes
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IPD50P04P413ATMA1
Infineon Technologies AG
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Datasheet
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IPD50P04P413ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 18 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain-source On Resistance-Max | 0.0126 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPD50P04P413ATMA1
This table gives cross-reference parts and alternative options found for IPD50P04P413ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50P04P413ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD50P04P413ATMA2 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN | Infineon Technologies AG | IPD50P04P413ATMA1 vs IPD50P04P413ATMA2 |