Part Details for IPD50R1K4CEBTMA1 by Infineon Technologies AG
Overview of IPD50R1K4CEBTMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPD50R1K4CEBTMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2500 |
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RFQ | ||
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Quest Components | 2000 |
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$0.1982 / $0.9910 | Buy Now | |
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Rochester Electronics | IPD50R1K4 - 500V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 574 |
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$0.1239 / $0.1458 | Buy Now |
Part Details for IPD50R1K4CEBTMA1
IPD50R1K4CEBTMA1 CAD Models
IPD50R1K4CEBTMA1 Part Data Attributes:
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IPD50R1K4CEBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50R1K4CEBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 49 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 4.8 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 8.8 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |