Part Details for IPD50R399CPBTMA1 by Infineon Technologies AG
Overview of IPD50R399CPBTMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPD50R399CPBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPD50R399 - 500V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 350 |
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$0.6694 / $0.7875 | Buy Now |
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DISTI #
IPD50R399CPBTMA1
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TME | Transistor: N-MOSFET, unipolar, 500V, 9A, 83W, PG-TO252-3 Min Qty: 1 | 0 |
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$1.0600 / $1.7600 | RFQ |
Part Details for IPD50R399CPBTMA1
IPD50R399CPBTMA1 CAD Models
IPD50R399CPBTMA1 Part Data Attributes
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IPD50R399CPBTMA1
Infineon Technologies AG
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Datasheet
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IPD50R399CPBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 215 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.399 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50R399CPBTMA1
This table gives cross-reference parts and alternative options found for IPD50R399CPBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50R399CPBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD50R399CPAT | Power Field-Effect Transistor | Infineon Technologies AG | IPD50R399CPBTMA1 vs IPD50R399CPAT |
| IPD50R399CPATMA1 | Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD50R399CPBTMA1 vs IPD50R399CPATMA1 |
| IPD50R399CPBT | Power Field-Effect Transistor | Infineon Technologies AG | IPD50R399CPBTMA1 vs IPD50R399CPBT |
| IPD50R399CP | Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD50R399CPBTMA1 vs IPD50R399CP |