Part Details for IPD60R600C6ATMA1 by Infineon Technologies AG
Overview of IPD60R600C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IPD60R600C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
30T1837
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Newark | Mosfet, N Ch, 600V, 7.3A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:7.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD60R600C6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 7183 |
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$0.5620 / $1.4900 | Buy Now |
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DISTI #
IPD60R600C6ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 7.3A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9614 In Stock |
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$0.5408 / $1.4400 | Buy Now |
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DISTI #
IPD60R600C6ATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600C6ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.5829 / $0.7125 | Buy Now |
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DISTI #
726-IPD60R600C6ATMA1
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Mouser Electronics | MOSFET N-Ch 600V 20.2A DPAK-2 RoHS: Compliant | 46836 |
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$0.5260 / $1.1000 | Buy Now |
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DISTI #
V72:2272_06384487
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Arrow Electronics | Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2112 Container: Cut Strips | Americas - 4983 |
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$0.5538 / $0.7851 | Buy Now |
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Future Electronics | Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5600 / $0.5850 | Buy Now |
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DISTI #
54490395
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Verical | Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R Min Qty: 11 Package Multiple: 1 Date Code: 2112 | Americas - 4983 |
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$0.5538 / $0.7198 | Buy Now |
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Quest Components | 696 |
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$0.5460 / $2.1000 | Buy Now | |
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DISTI #
IPD60R600C6ATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600C6ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.5829 / $0.7125 | Buy Now |
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Ameya Holding Limited | Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS™ Power Mosfet - TO-252-3 | 2304 |
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RFQ |
Part Details for IPD60R600C6ATMA1
IPD60R600C6ATMA1 CAD Models
IPD60R600C6ATMA1 Part Data Attributes:
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IPD60R600C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD60R600C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 133 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7.3 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD60R600C6ATMA1
This table gives cross-reference parts and alternative options found for IPD60R600C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R600C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD60R600C6BTMA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD60R600C6ATMA1 vs IPD60R600C6BTMA1 |
| IPD60R600C6AT | Power Field-Effect Transistor | Infineon Technologies AG | IPD60R600C6ATMA1 vs IPD60R600C6AT |
| IPD60R600C6BT | Power Field-Effect Transistor | Infineon Technologies AG | IPD60R600C6ATMA1 vs IPD60R600C6BT |