Datasheets
IPD60R600P6 by:

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2

Part Details for IPD60R600P6 by Infineon Technologies AG

Overview of IPD60R600P6 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IPD60R600P6

Part # Distributor Description Stock Price Buy
DISTI # IPD60R600P6CT-ND
DigiKey MOSFET N-CH 600V 7.3A TO252-3 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Limited Supply - Call
Buy Now
DISTI # TMOS1151
Rutronik N-CH 650V 18A 600mOhm TO252 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel Stock DE - 17500
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 2,500 $0.7309
  • 5,000 $0.5638
$0.5638 / $0.7309 Buy Now
Chip1Cloud Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 7.3A TO252 9705
RFQ

Part Details for IPD60R600P6

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IPD60R600P6 Part Data Attributes:

IPD60R600P6 Infineon Technologies AG
Buy Now Datasheet
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IPD60R600P6 Infineon Technologies AG Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 133 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7.3 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD60R600P6

This table gives cross-reference parts and alternative options found for IPD60R600P6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R600P6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD60R600P6BT Power Field-Effect Transistor Infineon Technologies AG IPD60R600P6 vs IPD60R600P6BT
IPD60R600P6AT Power Field-Effect Transistor Infineon Technologies AG IPD60R600P6 vs IPD60R600P6AT
Part Number Description Manufacturer Compare
IPD60R600P6AT Power Field-Effect Transistor Infineon Technologies AG IPD60R600P6 vs IPD60R600P6AT
IPD60R600P6BT Power Field-Effect Transistor Infineon Technologies AG IPD60R600P6 vs IPD60R600P6BT

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