Part Details for IPD70N12S311ATMA1 by Infineon Technologies AG
Overview of IPD70N12S311ATMA1 by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD70N12S311ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
58AJ2303
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Newark | Mosfet, N-Ch, 120V, 70A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:120V, Continuous Drain Current Id:70A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD70N12S311ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2599 |
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$0.9980 / $2.1000 | Buy Now |
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DISTI #
86AK5229
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Newark | Mosfet, N-Ch, 120V, 70A, To-252 Rohs Compliant: Yes |Infineon IPD70N12S311ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.9130 / $0.9310 | Buy Now |
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DISTI #
448-IPD70N12S311ATMA1CT-ND
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DigiKey | MOSFET N-CH 120V 70A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8555 In Stock |
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$0.8781 / $2.0200 | Buy Now |
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DISTI #
58AJ2303
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Avnet Americas | MOSFET_(120V300V) - Product that comes on tape, but is not reeled (Alt: 58AJ2303) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 2599 Partner Stock |
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$1.3900 / $2.1000 | Buy Now |
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DISTI #
726-IPD70N12S311ATMA
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Mouser Electronics | MOSFET MOSFET_(120V,300V) RoHS: Compliant | 18843 |
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$0.8770 / $2.0200 | Buy Now |
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DISTI #
71241625
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Verical | Trans MOSFET N-CH 120V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 20 Package Multiple: 1 Date Code: 2327 | Americas - 10000 |
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$0.9738 / $1.6375 | Buy Now |
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DISTI #
79051740
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Verical | Trans MOSFET N-CH 120V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 2500 Package Multiple: 2500 | Americas - 5000 |
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$0.8117 / $0.8844 | Buy Now |
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Rochester Electronics | MOSFET_(120V,300V) RoHS: Compliant Status: Active Min Qty: 1 | 4638 |
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$0.8419 / $0.9905 | Buy Now |
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DISTI #
58AJ2303
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Avnet Americas | MOSFET_(120V300V) - Product that comes on tape, but is not reeled (Alt: 58AJ2303) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 2599 Partner Stock |
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$1.3900 / $2.1000 | Buy Now |
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Ameya Holding Limited | Min Qty: 2500 | 19780 |
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$1.1675 / $1.2409 | Buy Now |
Part Details for IPD70N12S311ATMA1
IPD70N12S311ATMA1 CAD Models
IPD70N12S311ATMA1 Part Data Attributes:
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IPD70N12S311ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD70N12S311ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 120V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.0111 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 158 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD70N12S311ATMA1
This table gives cross-reference parts and alternative options found for IPD70N12S311ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD70N12S311ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK72E12N1 | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | IPD70N12S311ATMA1 vs TK72E12N1 |