Part Details for IPD70P04P409ATMA2 by Infineon Technologies AG
Results Overview of IPD70P04P409ATMA2 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPD70P04P409ATMA2 Information
IPD70P04P409ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD70P04P409ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AJ3775
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Newark | Mosfet, P-Ch, 40V, 73A, To-252 Rohs Compliant: Yes |Infineon IPD70P04P409ATMA2 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10876 |
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$0.6340 / $1.3800 | Buy Now |
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DISTI #
86AK5231
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Newark | Mosfet, P-Ch, 40V, 73A, To-252 Rohs Compliant: Yes |Infineon IPD70P04P409ATMA2 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5240 / $0.5260 | Buy Now |
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DISTI #
IPD70P04P409ATMA2
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Avnet Americas | OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 73A 3-Pin TO-252 Surface Mount - Tape and Reel (Alt: IPD70P04P409ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 140000 |
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$0.4765 / $0.4926 | Buy Now |
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DISTI #
IPD70P04P409ATMA2
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Avnet Americas | OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 73A 3-Pin TO-252 Surface Mount - Tape and Reel (Alt: IPD70P04P409ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.4764 / $0.4926 | Buy Now |
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Rochester Electronics | IPD70P04P4-09 - MOSFET_(20V,40V) RoHS: Compliant Status: Active Min Qty: 1 | 7282 |
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$0.4767 / $0.5608 | Buy Now |
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DISTI #
C1S322001576040
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Chip One Stop | MOSFET RoHS: Compliant Container: Cut Tape | 2500 |
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$0.6270 / $1.1500 | Buy Now |
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DISTI #
SP002325768
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EBV Elektronik | OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 73A 3-Pin TO-252 Surface Mount (Alt: SP002325768) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD70P04P409ATMA2
IPD70P04P409ATMA2 CAD Models
IPD70P04P409ATMA2 Part Data Attributes
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IPD70P04P409ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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IPD70P04P409ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 73A I(D), 40V, 0.0089ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO252-3-313, 3/2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 73 A | |
| Drain-source On Resistance-Max | 0.0089 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 292 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |