Part Details for IPD80R1K4CEATMA1 by Infineon Technologies AG
Overview of IPD80R1K4CEATMA1 by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD80R1K4CEATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9051
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Newark | Mosfet, N-Ch, 800V, 3.9A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD80R1K4CEATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8249 |
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$0.6230 / $1.4000 | Buy Now |
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DISTI #
IPD80R1K4CEATMA1CT-ND
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DigiKey | MOSFET N-CH 800V 3.9A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2500 In Stock |
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$0.5119 / $1.3600 | Buy Now |
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DISTI #
IPD80R1K4CEATMA1
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Avnet Americas | Trans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4CEATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.5140 / $0.6282 | Buy Now |
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DISTI #
726-IPD80R1K4CEATMA1
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Mouser Electronics | MOSFET N-Ch 800V 3.9A DPAK-2 RoHS: Compliant | 2500 |
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$0.5120 / $1.3600 | Buy Now |
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Future Electronics | Single N-Channel 800 V 1.4 Ohm 23 nC CoolMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5000 / $0.5250 | Buy Now |
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Future Electronics | Single N-Channel 800 V 1.4 Ohm 23 nC CoolMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5000 / $0.5250 | Buy Now |
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DISTI #
80015532
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Verical | Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2416 | Americas - 2500 |
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$0.8095 | Buy Now |
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DISTI #
79055429
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Verical | Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2411 | Americas - 2500 |
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$0.6129 | Buy Now |
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DISTI #
IPD80R1K4CEATMA1
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Avnet Americas | Trans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4CEATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.5140 / $0.6282 | Buy Now |
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DISTI #
IPD80R1K4CEATMA1
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TME | Transistor: N-MOSFET, unipolar, 800V, 2.3A, 63W, PG-TO252-3 Min Qty: 1 | 0 |
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$1.0000 / $1.6700 | RFQ |
Part Details for IPD80R1K4CEATMA1
IPD80R1K4CEATMA1 CAD Models
IPD80R1K4CEATMA1 Part Data Attributes:
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IPD80R1K4CEATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD80R1K4CEATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 3.9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD80R1K4CEATMA1
This table gives cross-reference parts and alternative options found for IPD80R1K4CEATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD80R1K4CEATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD80R1K4CE | Power Field-Effect Transistor | Infineon Technologies AG | IPD80R1K4CEATMA1 vs IPD80R1K4CE |