Part Details for IPD80R2K0P7ATMA1 by Infineon Technologies AG
Overview of IPD80R2K0P7ATMA1 by Infineon Technologies AG
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD80R2K0P7ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
24AC9042
|
Newark | Mosfet, N-Ch, 800V, 3A, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:3A, Drain Source Voltage Vds:800V, On Resistance Rds(On):1.7Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon IPD80R2K0P7ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 893 |
|
$0.4800 / $1.0000 | Buy Now |
DISTI #
IPD80R2K0P7ATMA1CT-ND
|
DigiKey | MOSFET N-CH 800V 3A TO252-3 Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
67 In Stock |
|
$0.3409 / $0.9100 | Buy Now |
DISTI #
IPD80R2K0P7ATMA1
|
Avnet Americas | LOW POWER_NEW - Tape and Reel (Alt: IPD80R2K0P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.4227 | Buy Now |
DISTI #
726-IPD80R2K0P7ATMA1
|
Mouser Electronics | MOSFET LOW POWER_NEW RoHS: Compliant | 103 |
|
$0.3410 / $0.9000 | Buy Now |
|
Future Electronics | Single N-Channel 800 V 2 Ohm 9 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3550 / $0.3800 | Buy Now |
|
Future Electronics | Single N-Channel 800 V 2 Ohm 9 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3550 / $0.3800 | Buy Now |
DISTI #
79001673
|
Verical | Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2317 | Americas - 60000 |
|
$0.4390 | Buy Now |
DISTI #
45122289
|
Verical | Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R Min Qty: 57 Package Multiple: 1 Date Code: 1845 | Americas - 2502 |
|
$0.4313 / $0.5513 | Buy Now |
|
Quest Components | 1003 |
|
$0.5460 / $2.1000 | Buy Now | |
DISTI #
IPD80R2K0P7ATMA1
|
Avnet Americas | LOW POWER_NEW - Tape and Reel (Alt: IPD80R2K0P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.4227 | Buy Now |
Part Details for IPD80R2K0P7ATMA1
IPD80R2K0P7ATMA1 CAD Models
IPD80R2K0P7ATMA1 Part Data Attributes:
|
IPD80R2K0P7ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD80R2K0P7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 6 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |