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Transistors / Power Field-Effect Transistors / IPD80R4K5P7ATMA1
Datasheets
IPD80R4K5P7ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2

Part Details for IPD80R4K5P7ATMA1 by Infineon Technologies AG

Results Overview of IPD80R4K5P7ATMA1 by Infineon Technologies AG

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IPD80R4K5P7ATMA1 Information

IPD80R4K5P7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD80R4K5P7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1690
Newark Mosfet, N-Ch, 800V, 1.5A, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:1.5A, Drain Source Voltage Vds:800V, On Resistance Rds(On):3.8Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Infineon IPD80R4K5P7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3411
  • 1 $0.8480
  • 10 $0.7420
  • 25 $0.6710
  • 50 $0.6000
  • 100 $0.5280
  • 250 $0.4850
  • 500 $0.4420
  • 1,000 $0.3830
$0.3830 / $0.8480 Buy Now
DISTI # IPD80R4K5P7ATMA1
Avnet Americas Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel 0
RFQ
Rochester Electronics IPD80R4K5 - Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 662
  • 1 $0.2768
  • 25 $0.2713
  • 100 $0.2602
  • 500 $0.2491
  • 1,000 $0.2353
$0.2353 / $0.2768 Buy Now
DISTI # IPD80R4K5P7
TME Transistor: N-MOSFET, unipolar, 800V, 1A, 13W, PG-TO252-3, ESD Min Qty: 1 0
  • 1 $0.6780
  • 5 $0.4590
  • 25 $0.3850
  • 100 $0.3610
  • 500 $0.3390
  • 1,000 $0.3170
  • 2,500 $0.3050
$0.3050 / $0.6780 RFQ
DISTI # C1S322001061131
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 1400
  • 5 $0.2390
  • 50 $0.2370
  • 500 $0.2330
$0.2330 / $0.2390 Buy Now
CHIPMALL.COM LIMITED 800V 1.5A 13W 4.5@10V,0.4A 3V@0.02mA 1 N-Channel TO-252-3 MOSFETs ROHS 113
  • 1 $0.4584
  • 10 $0.4494
  • 30 $0.4418
  • 100 $0.4357
$0.4357 / $0.4584 Buy Now
DISTI # SP001422632
EBV Elektronik Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R (Alt: SP001422632) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 42500
Buy Now
LCSC 800V 1.5A 13W 4.510V0.4A 3V0.02mA 1 N-channel TO-252-3 MOSFETs ROHS 113
  • 1 $0.4107
  • 10 $0.4026
  • 30 $0.3958
  • 100 $0.3904
$0.3904 / $0.4107 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 35000
  • 2,500 $0.3919
  • 35,000 $0.3627
$0.3627 / $0.3919 Buy Now

Part Details for IPD80R4K5P7ATMA1

IPD80R4K5P7ATMA1 CAD Models

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IPD80R4K5P7ATMA1 Part Data Attributes

Parametric Data
IPD80R4K5P7ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD80R4K5P7ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain-source On Resistance-Max 4.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 2.6 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IPD80R4K5P7ATMA1 Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and follow the recommended PCB layout guidelines. Also, consider using a heat sink with a thermal resistance of less than 10°C/W.

  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation and prevent damage to the device.

  • Yes, the IPD80R4K5P7ATMA1 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a gate driver with a high current capability.

  • Use a fuse or a current-sensing resistor to detect overcurrent conditions. For overvoltage protection, use a voltage clamp or a transient voltage suppressor (TVS) diode. Also, consider using a gate driver with built-in overcurrent and overvoltage protection.

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