Part Details for IPD90N03S4L02ATMA1 by Infineon Technologies AG
Overview of IPD90N03S4L02ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD90N03S4L02ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85X6035
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Newark | Mosfet, N-Ch, 30V, 90A, 175Deg C, 136W, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Infineon IPD90N03S4L02ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 73 |
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$0.8130 | Buy Now |
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DISTI #
86AK5240
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Newark | Mosfet, N-Ch, 30V, 90A, To-252 Rohs Compliant: Yes |Infineon IPD90N03S4L02ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.0300 / $1.0500 | Buy Now |
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DISTI #
IPD90N03S4L02ATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 90A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
54828 In Stock |
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$0.9949 / $2.2900 | Buy Now |
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DISTI #
IPD90N03S4L02ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD90N03S4L02ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1929 | Buy Now |
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DISTI #
726-IPD90N03S4L02ATM
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Mouser Electronics | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 RoHS: Compliant | 1484 |
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$0.9940 / $2.2900 | Buy Now |
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Future Electronics | Single N-Channel 30 V 2.2 mOhm 110 nC OptiMOS™ Power Mosfet - TO-252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
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$1.0100 | Buy Now |
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Rochester Electronics | IPD90N03 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 3269 |
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$0.9540 / $1.1200 | Buy Now |
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DISTI #
IPD90N03S4L02ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD90N03S4L02ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1929 | Buy Now |
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Ameya Holding Limited | Single N-Channel 30 V 2.2 mOhm 110 nC OptiMOS™ Power Mosfet - TO-252-3-11 | 2334 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 2500 | 2285 |
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$1.3191 / $1.4020 | Buy Now |
Part Details for IPD90N03S4L02ATMA1
IPD90N03S4L02ATMA1 CAD Models
IPD90N03S4L02ATMA1 Part Data Attributes
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IPD90N03S4L02ATMA1
Infineon Technologies AG
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Datasheet
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IPD90N03S4L02ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD90N03S4L02ATMA1
This table gives cross-reference parts and alternative options found for IPD90N03S4L02ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD90N03S4L02ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD90N03S4L-02 | Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD90N03S4L02ATMA1 vs IPD90N03S4L-02 |