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Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPD90N04S4-03
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Mouser Electronics | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 14400 |
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$0.6560 / $1.5400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 40V, 0.0032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 2000 |
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$0.5250 / $2.1000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 40V, 0.0032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 12 |
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$5.9000 / $8.8500 | Buy Now |
DISTI #
TMOSP10502
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Rutronik | MOSFET 40V 3.2mOHM AECQ TO252 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Stock DE - 240000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.8100 | Buy Now |
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Chip1Cloud | OptiMOS-T2 Power-Transistor | 27539 |
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RFQ | |
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LCSC | TO-252-3 MOSFETs ROHS | 2490 |
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$0.7834 / $1.3220 | Buy Now |
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IPD90N04S4-03
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD90N04S4-03
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252 | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.0032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 360 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPD90N04S4-03. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD90N04S4-03, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB100N04S204ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPD90N04S4-03 vs IPB100N04S204ATMA1 |
DMTH4004SK3Q-13 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Diodes Incorporated | IPD90N04S4-03 vs DMTH4004SK3Q-13 |
IPC100N04S5L2R6ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN | Infineon Technologies AG | IPD90N04S4-03 vs IPC100N04S5L2R6ATMA1 |
934066414127 | 100A, 40V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | NXP Semiconductors | IPD90N04S4-03 vs 934066414127 |
IPD90N04S403ATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPD90N04S4-03 vs IPD90N04S403ATMA1 |
BUK953R2-40E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | IPD90N04S4-03 vs BUK953R2-40E,127 |
934066421127 | 100A, 40V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IPD90N04S4-03 vs 934066421127 |
IPB100N04S2L03XT | Power Field-Effect Transistor, 100A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPD90N04S4-03 vs IPB100N04S2L03XT |
NP100N04NUJ-S18-AY | NP100N04NUJ-S18-AY | Renesas Electronics Corporation | IPD90N04S4-03 vs NP100N04NUJ-S18-AY |
IPC100N04S52R8ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN | Infineon Technologies AG | IPD90N04S4-03 vs IPC100N04S52R8ATMA1 |