Datasheets
IPD90P04P4L04ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD90P04P4L04ATMA1 by Infineon Technologies AG

Overview of IPD90P04P4L04ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPD90P04P4L04ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y2046
Newark Mosfet, P-Ch, -40V, -90A, 175Deg C, 125W, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD90P04P4L04ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # IPD90P04P4L04ATMA1
Avnet Americas Trans MOSFET P-CH 40V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90P04P4L04ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 7500
  • 2,500 $1.4040
  • 5,000 $1.3614
  • 10,000 $1.3189
  • 15,000 $1.2764
  • 20,000 $1.2338
  • 25,000 $1.1913
  • 250,000 $1.1487
$1.1487 / $1.4040 Buy Now
DISTI # SP000840194
EBV Elektronik Trans MOSFET P-CH 40V 90A 3-Pin TO-252 T/R (Alt: SP000840194) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET P-CH 40V 90A TO252-3 104300
  • 35 $1.5550
  • 80 $1.2760
  • 125 $1.2360
  • 170 $1.1960
  • 220 $1.1560
  • 290 $1.0370
$1.0370 / $1.5550 Buy Now

Part Details for IPD90P04P4L04ATMA1

IPD90P04P4L04ATMA1 CAD Models

IPD90P04P4L04ATMA1 Part Data Attributes

IPD90P04P4L04ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD90P04P4L04ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 360 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD90P04P4L04ATMA1

This table gives cross-reference parts and alternative options found for IPD90P04P4L04ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD90P04P4L04ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD90P04P405ATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPD90P04P4L04ATMA1 vs IPD90P04P405ATMA1

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