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Transistors / Power Field-Effect Transistors / IPD90P04P4L04ATMA2
Datasheets
IPD90P04P4L04ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPD90P04P4L04ATMA2 by Infineon Technologies AG

Results Overview of IPD90P04P4L04ATMA2 by Infineon Technologies AG

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IPD90P04P4L04ATMA2 Information

IPD90P04P4L04ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD90P04P4L04ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 38AJ3778
Newark Mosfet, P-Ch, 40V, 90A, To-252 Rohs Compliant: Yes |Infineon IPD90P04P4L04ATMA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2666
  • 1 $0.9850
  • 10 $0.9850
  • 25 $0.9850
  • 50 $0.9850
  • 100 $0.9850
  • 250 $0.9850
  • 500 $0.9850
  • 1,000 $0.9460
$0.9460 / $0.9850 Buy Now
DISTI # 86AK5246
Newark Mosfet, P-Ch, 40V, 90A, To-252 Rohs Compliant: Yes |Infineon IPD90P04P4L04ATMA2 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.8530
  • 5,000 $0.8470
$0.8470 / $0.8530 Buy Now
DISTI # IPD90P04P4L04ATMA2
Avnet Americas OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 90A 3-Pin TO-252 Surface M - Tape and Reel (Alt: IPD90P04P4L04ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 5000
  • 2,500 $0.7929
  • 5,000 $0.7837
  • 10,000 $0.7733
  • 15,000 $0.7641
  • 20,000 $0.7538
$0.7538 / $0.7929 Buy Now
DISTI # 38AJ3778
Avnet Americas OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 90A 3-Pin TO-252 Surface M - Product that comes on tape, but is not reeled (Alt: 38AJ3778) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 2666 Partner Stock
  • 1 $2.3500
  • 10 $1.6000
  • 25 $1.4500
  • 50 $1.2900
  • 100 $1.1400
$1.1400 / $2.3500 Buy Now
Rochester Electronics IPD90P04P4L-04 - MOSFET_(20V,40V) RoHS: Compliant Status: Active Min Qty: 1 29315
  • 1 $0.9049
  • 25 $0.8868
  • 100 $0.8506
  • 500 $0.8144
  • 1,000 $0.7692
$0.7692 / $0.9049 Buy Now
DISTI # IPD90P04P4L04ATMA2
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 2365
  • 1 $2.2700
  • 10 $1.5500
  • 50 $1.3000
  • 100 $1.1200
  • 500 $0.8860
  • 1,000 $0.8830
$0.8830 / $2.2700 Buy Now
DISTI # SP002325782
EBV Elektronik OptiMOSP2 PowerTransistor PChannel Enhancement Mode 40V 90A 3Pin TO252 Surface M (Alt: SP002325782) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET P-CH 40V 90A TO252-3 / P-Channel 40 V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313 27900
  • 50 $1.0763
  • 100 $1.0069
  • 155 $0.9722
  • 225 $0.9028
  • 290 $0.8680
  • 365 $0.8333
$0.8333 / $1.0763 Buy Now

Part Details for IPD90P04P4L04ATMA2

IPD90P04P4L04ATMA2 CAD Models

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IPD90P04P4L04ATMA2 Part Data Attributes

Parametric Data
IPD90P04P4L04ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD90P04P4L04ATMA2 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 360 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

IPD90P04P4L04ATMA2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPD90P04P4L04ATMA2 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.

  • A recommended PCB layout for IPD90P04P4L04ATMA2 includes a solid ground plane, wide power traces, and a decoupling capacitor (e.g., 100nF) close to the device.

  • The device should be powered up and down slowly (e.g., 10ms) to prevent voltage spikes and ensure proper operation.

  • The recommended soldering conditions for IPD90P04P4L04ATMA2 are: peak temperature ≤ 260°C, time above 217°C ≤ 30s, and a soldering iron temperature ≤ 350°C.

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