Part Details for IPG20N04S408AATMA1 by Infineon Technologies AG
Overview of IPG20N04S408AATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPG20N04S408AATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1695
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Newark | Mosfet, N-Ch, 40V, 20A, 175Deg C, 65W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:40V, Drain Source Voltage Vds P Channel:40V, Continuous Drain Current Id N Channel:20A, Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Infineon IPG20N04S408AATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5636 |
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$0.2620 | Buy Now |
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DISTI #
IPG20N04S408AATMA1CT-ND
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DigiKey | MOSFET 2N-CH 40V 20A 8TDSON Min Qty: 1 Lead time: 52 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
4071 In Stock |
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$0.8079 / $1.7900 | Buy Now |
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DISTI #
34AC1695
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Avnet Americas | Trans MOSFET N-CH 40V 20A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 34AC1695) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 0 |
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$1.2400 / $1.8600 | Buy Now |
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Rochester Electronics | IPG20N04S4-08A - MOSFET_(20V,40V) ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6918 |
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$0.7454 / $0.8770 | Buy Now |
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DISTI #
34AC1695
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Avnet Americas | Trans MOSFET N-CH 40V 20A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 34AC1695) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 0 |
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$1.2400 / $1.8600 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 4750 |
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$1.7251 / $1.8337 | Buy Now |
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DISTI #
2781205
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element14 Asia-Pacific | MOSFET, AEC-Q101, DUAL N-CH, 20A, TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape | 4366 |
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$0.8878 / $1.8939 | Buy Now |
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DISTI #
2781205RL
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element14 Asia-Pacific | MOSFET, AEC-Q101, DUAL N-CH, 20A, TDSON RoHS: Compliant Min Qty: 100 Container: Reel | 4366 |
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$0.8878 / $1.2503 | Buy Now |
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DISTI #
2781205
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Farnell | MOSFET, AEC-Q101, DUAL N-CH, 20A, TDSON RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 4366 |
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$0.8131 / $2.0391 | Buy Now |
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DISTI #
2781205RL
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Farnell | MOSFET, AEC-Q101, DUAL N-CH, 20A, TDSON RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel | 4366 |
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$0.8131 / $1.2021 | Buy Now |
Part Details for IPG20N04S408AATMA1
IPG20N04S408AATMA1 CAD Models
IPG20N04S408AATMA1 Part Data Attributes:
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IPG20N04S408AATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPG20N04S408AATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0076 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 39 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |