Part Details for IPG20N06S2L-35 by Infineon Technologies AG
Results Overview of IPG20N06S2L-35 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPG20N06S2L-35 Information
IPG20N06S2L-35 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPG20N06S2L-35
Part # | Distributor | Description | Stock | Price | Buy | |
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CHIPMALL.COM LIMITED | TDSON-8 MOSFETs ROHS | 832 |
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$1.0478 / $1.3630 | Buy Now |
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LCSC | TDSON-8 MOSFETs ROHS | 832 |
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$0.9824 / $1.2779 | Buy Now |
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Win Source Electronics | OptiMOS Power-Transistor | 114800 |
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$1.0697 / $1.3816 | Buy Now |
Part Details for IPG20N06S2L-35
IPG20N06S2L-35 CAD Models
IPG20N06S2L-35 Part Data Attributes
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IPG20N06S2L-35
Infineon Technologies AG
Buy Now
Datasheet
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IPG20N06S2L-35
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPG20N06S2L-35
This table gives cross-reference parts and alternative options found for IPG20N06S2L-35. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPG20N06S2L-35, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPG20N06S3L35ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | IPG20N06S2L-35 vs IPG20N06S3L35ATMA1 |
IPG20N06S2L-35A | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor | IPG20N06S2L-35 vs IPG20N06S2L-35A |