Datasheets
IPG20N06S2L-35 by: Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for IPG20N06S2L-35 by Infineon Technologies AG

Results Overview of IPG20N06S2L-35 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IPG20N06S2L-35 Information

IPG20N06S2L-35 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPG20N06S2L-35

Part # Distributor Description Stock Price Buy
CHIPMALL.COM LIMITED TDSON-8 MOSFETs ROHS 832
  • 1 $1.3630
  • 10 $1.2454
  • 30 $1.1715
  • 100 $1.0961
  • 500 $1.0629
  • 1,000 $1.0478
$1.0478 / $1.3630 Buy Now
LCSC TDSON-8 MOSFETs ROHS 832
  • 1 $1.2779
  • 10 $1.1676
  • 30 $1.0983
  • 100 $1.0277
  • 500 $0.9965
  • 1,000 $0.9824
$0.9824 / $1.2779 Buy Now
Win Source Electronics OptiMOS Power-Transistor 114800
  • 40 $1.3816
  • 80 $1.2925
  • 125 $1.2479
  • 175 $1.1588
  • 225 $1.1142
  • 285 $1.0697
$1.0697 / $1.3816 Buy Now

Part Details for IPG20N06S2L-35

IPG20N06S2L-35 CAD Models

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IPG20N06S2L-35 Part Data Attributes

IPG20N06S2L-35 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPG20N06S2L-35 Infineon Technologies AG Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPG20N06S2L-35

This table gives cross-reference parts and alternative options found for IPG20N06S2L-35. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPG20N06S2L-35, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPG20N06S3L35ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 IPG20N06S2L-35 vs IPG20N06S3L35ATMA1
IPG20N06S2L-35A Infineon Technologies AG Check for Price Power Field-Effect Transistor IPG20N06S2L-35 vs IPG20N06S2L-35A

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