Part Details for IPI65R660CFDXKSA1 by Infineon Technologies AG
Overview of IPI65R660CFDXKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPI65R660CFDXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IPI65R660CFDXKSA1
|
Avnet Americas | POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 650V, 0.66OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA - Rail/Tube (Alt: IPI65R660CFDXKSA1) RoHS: Compliant Min Qty: 511 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 24000 Partner Stock |
|
$0.5785 / $0.7146 | Buy Now |
|
|
Rochester Electronics | IPI65R660 - 650V and 700V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2483 |
|
$0.6074 / $0.7146 | Buy Now |
Part Details for IPI65R660CFDXKSA1
IPI65R660CFDXKSA1 CAD Models
IPI65R660CFDXKSA1 Part Data Attributes
|
|
IPI65R660CFDXKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPI65R660CFDXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | GREEN, PLASTIC, TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.66 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |