Datasheets
IPI80N06S4-07 by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Part Details for IPI80N06S4-07 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IPI80N06S4-07 Information

IPI80N06S4-07 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPI80N06S4-07

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IPI80N06S4-07 Part Data Attributes

IPI80N06S4-07 Infineon Technologies AG
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IPI80N06S4-07 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA
Package Description GREEN, PLASTIC, TO-262, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 71 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0071 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPI80N06S4-07

This table gives cross-reference parts and alternative options found for IPI80N06S4-07. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI80N06S4-07, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPI80N06S407AKSA2 Infineon Technologies AG $1.2744 Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPI80N06S4-07 vs IPI80N06S407AKSA2
Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPI80N06S4-07 vs IPB80N06S2LH5ATMA1
IXFH68N20 Littelfuse Inc Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IPI80N06S4-07 vs IXFH68N20
STW10NK80Z STMicroelectronics $2.0575 N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package IPI80N06S4-07 vs STW10NK80Z
IXFK60N55Q2 Littelfuse Inc Check for Price Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IPI80N06S4-07 vs IXFK60N55Q2
STW20NK70Z STMicroelectronics Check for Price 20A, 700V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN IPI80N06S4-07 vs STW20NK70Z
IRLSZ34 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IPI80N06S4-07 vs IRLSZ34
IPP45N06S4-09 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 45A I(D), 60V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPI80N06S4-07 vs IPP45N06S4-09
2SK2464 SANYO Electric Co Ltd Check for Price Power Field-Effect Transistor, 45A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN IPI80N06S4-07 vs 2SK2464
SPP04N60C2 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IPI80N06S4-07 vs SPP04N60C2
SSH7N60B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IPI80N06S4-07 vs SSH7N60B

IPI80N06S4-07 Related Parts

IPI80N06S4-07 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IPI80N06S4-07 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.

  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the PCB. Additionally, consider using a heat sink with a high thermal conductivity and a sufficient surface area to dissipate heat efficiently.

  • For optimal performance and thermal management, it's recommended to follow a 2-layer or 4-layer PCB layout with a solid ground plane and a separate power plane. Keep the high-current paths short and wide, and ensure the device's exposed pad is connected to a solid ground plane. Avoid using vias under the device's exposed pad to prevent thermal resistance increase.

  • Yes, the IPI80N06S4-07 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductances and capacitances. Additionally, ensure the device is properly cooled to prevent overheating.

  • To protect the IPI80N06S4-07 from overvoltage and overcurrent, consider using a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, use a current sense resistor and a current limiter or a fuse to prevent overcurrent conditions. Ensure the device is operated within its specified voltage and current ratings.

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