Datasheets
IPL60R299CP by:

Power Field-Effect Transistor, 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, GREEN, LEADLESS, PLASTIC, THINPAK, VSON-4

Part Details for IPL60R299CP by Infineon Technologies AG

Overview of IPL60R299CP by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPL60R299CP

Part # Distributor Description Stock Price Buy
Bristol Electronics   167
RFQ
Bristol Electronics   Min Qty: 3 60
  • 3 $2.4640
  • 12 $1.6016
  • 33 $1.2320
$1.2320 / $2.4640 Buy Now
Quest Components   48
  • 1 $3.3000
  • 4 $2.2000
  • 12 $1.6500
$1.6500 / $3.3000 Buy Now
Quest Components   133
  • 1 $3.9600
  • 27 $2.6400
  • 96 $2.4420
$2.4420 / $3.9600 Buy Now
DISTI # SMC-IPL60R299CP
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 82338
RFQ
Chip1Cloud MOSFET N-CH 650V 11.1A 4VSON 6410
RFQ

Part Details for IPL60R299CP

IPL60R299CP CAD Models

IPL60R299CP Part Data Attributes:

IPL60R299CP Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPL60R299CP Infineon Technologies AG Power Field-Effect Transistor, 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, GREEN, LEADLESS, PLASTIC, THINPAK, VSON-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PSSO-N4
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11.1 A
Drain-source On Resistance-Max 0.299 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PSSO-N4
JESD-609 Code e3
Moisture Sensitivity Level 2A
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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