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Power Field-Effect Transistor, 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, GREEN, LEADLESS, PLASTIC, THINPAK, VSON-4
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Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 167 |
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RFQ | ||
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Bristol Electronics | Min Qty: 3 | 60 |
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$1.2320 / $2.4640 | Buy Now |
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Quest Components | 48 |
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$1.6500 / $3.3000 | Buy Now | |
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Quest Components | 133 |
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$2.4420 / $3.9600 | Buy Now | |
DISTI #
SMC-IPL60R299CP
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 82338 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 650V 11.1A 4VSON | 6410 |
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RFQ |
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IPL60R299CP
Infineon Technologies AG
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Datasheet
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IPL60R299CP
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, GREEN, LEADLESS, PLASTIC, THINPAK, VSON-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, S-PSSO-N4 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11.1 A | |
Drain-source On Resistance-Max | 0.299 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PSSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2A | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |