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Power Field-Effect Transistor, 28A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPL65R070C7
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Mouser Electronics | MOSFETs HIGH POWER BEST IN CLASS RoHS: Compliant | 2554 |
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$3.8100 / $7.1900 | Buy Now |
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LCSC | VSON-4(8x8) MOSFETs ROHS | 5 |
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$6.3997 / $6.8128 | Buy Now |
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IPL65R070C7
Infineon Technologies AG
Buy Now
Datasheet
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IPL65R070C7
Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | VSON-4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 171 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PSSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2A | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 145 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPL65R070C7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPL65R070C7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB65R110CFDATMA2 | Power Field-Effect Transistor, TO-263, D2PAK-3 | Infineon Technologies AG | IPL65R070C7 vs IPB65R110CFDATMA2 |
SIHG33N60EF-GE3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | IPL65R070C7 vs SIHG33N60EF-GE3 |
IPW60R099CS | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, TO-247, 3 PIN | Infineon Technologies AG | IPL65R070C7 vs IPW60R099CS |
STL32N55M5 | 26A, 550V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, 8 X 8 MM, ROHS COMPLIANT, POWERFLAT-5 | STMicroelectronics | IPL65R070C7 vs STL32N55M5 |
STB34NM60N | N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in D2PAK package | STMicroelectronics | IPL65R070C7 vs STB34NM60N |
IPB65R110CFDAATMA1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPL65R070C7 vs IPB65R110CFDAATMA1 |
SP000088490 | Power Field-Effect Transistor, | Infineon Technologies AG | IPL65R070C7 vs SP000088490 |
TK31V60W | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPL65R070C7 vs TK31V60W |
SIHH26N60E-T1-GE3 | Power Field-Effect Transistor, 25A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 | Vishay Intertechnologies | IPL65R070C7 vs SIHH26N60E-T1-GE3 |
SIHB33N60E-E3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | IPL65R070C7 vs SIHB33N60E-E3 |