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Part Details for IPL65R1K0C6SATMA1 by Infineon Technologies AG
Overview of IPL65R1K0C6SATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPL65R1K0C6SATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPL65R1K0C6SATMA1
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Avnet Americas | Trans MOSFET N-CH 700V 4.2A 5-Pin TPAK T/R - Tape and Reel (Alt: IPL65R1K0C6SATMA1) RoHS: Compliant Min Qty: 567 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 3000 Partner Stock |
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$0.5469 / $0.6434 | Buy Now |
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Rochester Electronics | IPL65R1K0 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 3000 |
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$0.5469 / $0.6434 | Buy Now |
Part Details for IPL65R1K0C6SATMA1
IPL65R1K0C6SATMA1 CAD Models
IPL65R1K0C6SATMA1 Part Data Attributes
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IPL65R1K0C6SATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPL65R1K0C6SATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, THINPAK-5
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, THINPAK-5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12.3 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |