Part Details for IPP041N04NG by Infineon Technologies AG
Overview of IPP041N04NG by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP041N04NG
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Wuhan P&S | 40V,80A,N Channel Power MOSFET Min Qty: 1 | 500 |
|
$0.5500 / $0.7700 | Buy Now |
Part Details for IPP041N04NG
IPP041N04NG CAD Models
IPP041N04NG Part Data Attributes
|
IPP041N04NG
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP041N04NG
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |