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Transistors Power Field-Effect Transistors IPP048N04NGXKSA1

Transistors
IPP048N04NGXKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 70A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Overview of IPP048N04NGXKSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IPP048N04NGXKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 448-IPP048N04NGXKSA1-ND
DigiKey MOSFET N-CH 40V 70A TO220-3 Min Qty: 500 Lead time: 20 Weeks Container: Tube Limited Supply - Call
  • 500 $0.7903
$0.7903 Buy Now
DISTI # 726-IPP048N04NGXKSA1
Mouser Electronics MOSFETs N-Ch 40V 70A TO220-3 OptiMOS 3 RoHS: Compliant 84
  • 1 $1.5500
  • 10 $1.2900
  • 100 $1.0300
  • 250 $0.9470
  • 500 $0.8310
  • 1,000 $0.8150
  • 2,500 $0.8090
  • 5,000 $0.8050
$0.8050 / $1.5500 Buy Now
DISTI # 19803524
Verical Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 12 Package Multiple: 1 Americas - 492
  • 12 $0.7448
  • 500 $0.7373
$0.7373 / $0.7448 Buy Now

CAD Models for IPP048N04NGXKSA1 by Infineon Technologies AG
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Part Data Attributes for IPP048N04NGXKSA1 by Infineon Technologies AG
Parametric Data

IPP048N04NGXKSA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
35 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
70 A
Drain-source On Resistance-Max
0.0048 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPP048N04NGXKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 70A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
    VS

Alternate Parts for IPP048N04NGXKSA1

This table gives cross-reference parts and alternative options found for IPP048N04NGXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP048N04NGXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
STD12NF06L-1 N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package STMicroelectronics IPP048N04NGXKSA1 vs STD12NF06L-1
IPB45N06S4L08ATMA2 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPP048N04NGXKSA1 vs IPB45N06S4L08ATMA2
STP140NF55 N-CHANNEL 55V 0.0065 OHM 80A TO-220 STRIPFET II MOSFET STMicroelectronics IPP048N04NGXKSA1 vs STP140NF55
STP36NF06L N-CHANNEL 60V - 0.032 Ohm - 30A TO-220 STRIPFET(TM) II MOSFET STMicroelectronics IPP048N04NGXKSA1 vs STP36NF06L
STD18N55M5 N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package STMicroelectronics IPP048N04NGXKSA1 vs STD18N55M5
STD11NM60N N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package STMicroelectronics IPP048N04NGXKSA1 vs STD11NM60N
STD5N52K3 N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in DPAK package STMicroelectronics IPP048N04NGXKSA1 vs STD5N52K3
STP55NF06L N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package STMicroelectronics IPP048N04NGXKSA1 vs STP55NF06L
STP80NF55-06 N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET STMicroelectronics IPP048N04NGXKSA1 vs STP80NF55-06
APT50M75LFLLG Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc IPP048N04NGXKSA1 vs APT50M75LFLLG

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