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Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AC3275
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Newark | Mosfet, N-Ch, 150V, 120A, 175Deg C, 300W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:120A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.8V Rohs Compliant: Yes |Infineon IPP051N15N5AKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IPP051N15N5AKSA1
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Avnet Americas | MOS Power Transistors LV (< 200V) - Rail/Tube (Alt: IPP051N15N5AKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$2.5853 / $2.6704 | Buy Now |
DISTI #
IPP051N15N5AKSA1
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TME | Transistor: N-MOSFET, unipolar, 150V, 115A, Idm: 480A, 300W Min Qty: 1 | 0 |
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$3.6000 / $5.8200 | RFQ |
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CHIPMALL.COM LIMITED | The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications | 313 |
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$3.9965 | Buy Now |
DISTI #
SP001279600
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EBV Elektronik | MOS Power Transistors LV (< 200V) (Alt: SP001279600) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 150V 120A 5.1m10V60A 300W 4.6V264uA 1 N-channel TO-220-3 MOSFETs ROHS | 44 |
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$1.9178 / $2.8620 | Buy Now |
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Win Source Electronics | MOSFET N-CH 150V 120A TO220-3 | 3100 |
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$2.9432 / $4.4148 | Buy Now |
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IPP051N15N5AKSA1
Infineon Technologies AG
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Datasheet
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IPP051N15N5AKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPP051N15N5AKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP051N15N5AKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
NTBGS6D5N15MC | onsemi | $4.1469 | Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Channel, D2PAK7, D2PAK-7 / TO-263-7, 800-REEL | IPP051N15N5AKSA1 vs NTBGS6D5N15MC |
IPB048N15N5 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | IPP051N15N5AKSA1 vs IPB048N15N5 |
IPP051N15N5 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IPP051N15N5AKSA1 vs IPP051N15N5 |