Part Details for IPP065N03LG by Infineon Technologies AG
Overview of IPP065N03LG by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP065N03LG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPP065N03LG
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Avnet Americas | Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP065N03LG) RoHS: Compliant Min Qty: 1042 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk | 1500 Partner Stock |
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$0.3133 / $0.3500 | Buy Now |
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Rochester Electronics | IPP065N03 - N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2650 |
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$0.2975 / $0.3500 | Buy Now |
Part Details for IPP065N03LG
IPP065N03LG CAD Models
IPP065N03LG Part Data Attributes
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IPP065N03LG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP065N03LG
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 56 W | |
Pulsed Drain Current-Max (IDM) | 350 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPP065N03LG
This table gives cross-reference parts and alternative options found for IPP065N03LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP065N03LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRL3103PBF | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IPP065N03LG vs IRL3103PBF |
IRF3707L | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | International Rectifier | IPP065N03LG vs IRF3707L |
IRF3707ZSTRLPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IPP065N03LG vs IRF3707ZSTRLPBF |
H7N0312LD | 85A, 30V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | IPP065N03LG vs H7N0312LD |
2SK3134L | 75A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | IPP065N03LG vs 2SK3134L |
2SK3134(L) | 75A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | IPP065N03LG vs 2SK3134(L) |
2SK3572-S-AZ | Power Field-Effect Transistor, 80A I(D), 20V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN | NEC Electronics Group | IPP065N03LG vs 2SK3572-S-AZ |
IRF3707ZCSTRLP | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IPP065N03LG vs IRF3707ZCSTRLP |
IRF3707ZSPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IPP065N03LG vs IRF3707ZSPBF |
IRF3707ZSTRRPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IPP065N03LG vs IRF3707ZSTRRPBF |