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Part Details for IPP086N10N3GXKSA1 by Infineon Technologies AG
Overview of IPP086N10N3GXKSA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP086N10N3GXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AC9726
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Newark | Mosfet, N-Ch, 100V, 80A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0074Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.7V, Power Rohs Compliant: Yes |Infineon IPP086N10N3GXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1206 |
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$1.1200 / $2.3400 | Buy Now |
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DISTI #
448-IPP086N10N3GXKSA1-ND
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DigiKey | MOSFET N-CH 100V 80A TO220-3 Min Qty: 500 Lead time: 18 Weeks Container: Tube | Temporarily Out of Stock |
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$0.8822 | Buy Now |
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DISTI #
IPP086N10N3GXKSA1
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Avnet Americas | Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-220, Through Hole - Rail/Tube (Alt: IPP086N10N3GXKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 350 Partner Stock |
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RFQ | |
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DISTI #
IPP086N10N3GXKSA1
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Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1) RoHS: Compliant Min Qty: 550 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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$0.5633 | Buy Now |
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Future Electronics | Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 18 Weeks Container: Tube | 0Tube |
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$0.8650 / $0.9550 | Buy Now |
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Future Electronics | Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 18 Weeks Container: Tube | 0Tube |
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$0.8650 / $0.9550 | Buy Now |
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Rochester Electronics | IPP086N10 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 350 |
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$0.7367 / $0.8667 | Buy Now |
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DISTI #
IPP086N10N3GXKSA1
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TME | Transistor: N-MOSFET, unipolar, 100V, 80A, 125W, PG-TO220-3 Min Qty: 1 | 0 |
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$0.8400 / $1.3600 | RFQ |
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DISTI #
C1S322001042127
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Tube | 444 |
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$0.9440 / $1.9100 | Buy Now |
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DISTI #
C1S322000389623
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 25 |
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$4.0900 | Buy Now |
Part Details for IPP086N10N3GXKSA1
IPP086N10N3GXKSA1 CAD Models
IPP086N10N3GXKSA1 Part Data Attributes
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IPP086N10N3GXKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP086N10N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0086 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP086N10N3GXKSA1
This table gives cross-reference parts and alternative options found for IPP086N10N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP086N10N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP086N10N3G | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP086N10N3GXKSA1 vs IPP086N10N3G |