Part Details for IPP60R099C7XKSA1 by Infineon Technologies AG
Overview of IPP60R099C7XKSA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP60R099C7XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9081
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Newark | Mosfet, N-Ch, 600V, 22A, 150Deg C, 110W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:22A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPP60R099C7XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 25 |
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$1.1600 | Buy Now |
DISTI #
448-IPP60R099C7XKSA1-ND
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DigiKey | MOSFET N-CH 600V 22A TO220-3 Min Qty: 500 Lead time: 17 Weeks Container: Tube | Temporarily Out of Stock |
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$2.2792 | Buy Now |
DISTI #
13AC9081
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Avnet Americas | MOS Power Transistors HV (>= 200V) - Bulk (Alt: 13AC9081) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 25 Partner Stock |
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$4.5900 / $6.5500 | Buy Now |
DISTI #
IPP60R099C7XKSA1
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Avnet Americas | MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R099C7XKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
DISTI #
726-IPP60R099C7XKSA1
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Mouser Electronics | MOSFETs Y RoHS: Compliant | 634 |
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$2.3000 / $6.2700 | Buy Now |
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Future Electronics | Single N-Channel 600 V 99 mOhm 42 nC CoolMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube | 0Tube |
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$2.1900 / $2.2700 | Buy Now |
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Future Electronics | Single N-Channel 600 V 99 mOhm 42 nC CoolMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube | 0Tube |
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$2.1900 / $2.5300 | Buy Now |
DISTI #
77264920
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Verical | Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2351 | Americas - 420 |
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$5.4625 / $7.3125 | Buy Now |
DISTI #
83718582
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Verical | Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2430 | Americas - 300 |
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$2.2614 / $4.8965 | Buy Now |
DISTI #
IPP60R099C7XKSA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 22A, 110W, PG-TO220-3 Min Qty: 1 | 0 |
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$5.7100 / $9.5200 | RFQ |
Part Details for IPP60R099C7XKSA1
IPP60R099C7XKSA1 CAD Models
IPP60R099C7XKSA1 Part Data Attributes
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IPP60R099C7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP60R099C7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 97 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.099 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 83 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPP60R099C7XKSA1
This table gives cross-reference parts and alternative options found for IPP60R099C7XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R099C7XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPW60R099C7 | Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Infineon Technologies AG | IPP60R099C7XKSA1 vs IPW60R099C7 |
IPT65R105G7 | Power Field-Effect Transistor | Infineon Technologies AG | IPP60R099C7XKSA1 vs IPT65R105G7 |