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Part Details for IPP60R125CFD7XKSA1 by Infineon Technologies AG
Overview of IPP60R125CFD7XKSA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP60R125CFD7XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71AC0398
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Newark | Mosfet, 600V, 18A, 150Deg C, 92W, Transistor Polarity:N Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.104Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPP60R125CFD7XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1472 |
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$2.9300 / $4.6400 | Buy Now |
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DISTI #
448-IPP60R125CFD7XKSA1-ND
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DigiKey | MOSFET N-CH 600V 18A TO220-3 Min Qty: 1 Lead time: 20 Weeks Container: Tube |
288 In Stock |
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$1.6900 / $4.5500 | Buy Now |
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DISTI #
IPP60R125CFD7XKSA1
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Avnet Americas | CoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-220 - Rail/Tube (Alt: IPP60R125CFD7XKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 10 Partner Stock |
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RFQ | |
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DISTI #
IPP60R125CFD7XKSA1
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Avnet Americas | CoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-220 - Rail/Tube (Alt: IPP60R125CFD7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
726-IPP60R125CFD7XKS
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Mouser Electronics | MOSFETs Y RoHS: Compliant | 893 |
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$1.6900 / $3.6200 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks Container: Tube | 0Tube |
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$1.6600 / $1.8300 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks Container: Tube | 0Tube |
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$1.6600 / $1.8300 | Buy Now |
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Future Electronics | RoHS: Not Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Container: Bulk | 0Bulk |
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$1.6600 / $1.8900 | Buy Now |
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Rochester Electronics | IPP60R125CFD7 - HIGH POWER_NEW RoHS: Compliant Status: Active Min Qty: 1 | 10 |
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$1.6800 / $1.9700 | Buy Now |
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DISTI #
C1S322001061779
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Tube | 500 |
|
$2.0200 / $3.7100 | Buy Now |
Part Details for IPP60R125CFD7XKSA1
IPP60R125CFD7XKSA1 CAD Models
IPP60R125CFD7XKSA1 Part Data Attributes
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IPP60R125CFD7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP60R125CFD7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 78 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 92 W | |
| Pulsed Drain Current-Max (IDM) | 66 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |