Part Details for IPP60R250CPXKSA1 by Infineon Technologies AG
Overview of IPP60R250CPXKSA1 by Infineon Technologies AG
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPP60R250CPXKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPP60R250CPXKSA1-ND
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DigiKey | MOSFET N-CH 650V 12A TO220-3 Min Qty: 1 Lead time: 65 Weeks Container: Tube |
913 In Stock |
|
$2.2766 / $3.7700 | Buy Now |
DISTI #
IPP60R250CPXKSA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 12A, 104W, PG-TO220-3 Min Qty: 1 | 0 |
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$1.9400 / $3.2300 | RFQ |
DISTI #
2480719
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Farnell | MOSFET, N-CH, 600V, 12A, TO-220-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
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$1.5112 / $2.6977 | Buy Now |
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Perfect Parts Corporation | 5289 |
|
RFQ |
Part Details for IPP60R250CPXKSA1
IPP60R250CPXKSA1 CAD Models
IPP60R250CPXKSA1 Part Data Attributes
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IPP60R250CPXKSA1
Infineon Technologies AG
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Datasheet
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IPP60R250CPXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 345 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |