Part Details for IPP65R380E6XKSA1 by Infineon Technologies AG
Overview of IPP65R380E6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPP65R380E6XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Vyrian | Limited Stock - email | 0 |
|
RFQ |
Part Details for IPP65R380E6XKSA1
IPP65R380E6XKSA1 CAD Models
IPP65R380E6XKSA1 Part Data Attributes:
|
IPP65R380E6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP65R380E6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 215 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 29 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |