Transistors
IPP65R600C6XKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Overview of IPP65R600C6XKSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPP65R600C6XKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IPP65R600C6XKSA1
Avnet Americas - Rail/Tube (Alt: IPP65R600C6XKSA1) RoHS: Compliant Min Qty: 556 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 165350 Partner Stock
  • 1 $0.6563
  • 25 $0.6125
  • 25 $0.6432
  • 100 $0.5875
  • 1,000 $0.5313
$0.5313 / $0.6563 Buy Now
Rochester Electronics IPP65R600 - 650V and 700V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 500
  • 1 $0.6563
  • 25 $0.6432
  • 100 $0.6169
  • 500 $0.5907
  • 1,000 $0.5579
$0.5579 / $0.6563 Buy Now
DISTI # C1S322002435810
Chip1Stop MOSFET RoHS: Compliant 332
  • 1 $0.9310
  • 10 $0.6650
  • 25 $0.5880
$0.5880 / $0.9310 Buy Now

CAD Models for IPP65R600C6XKSA1 by Infineon Technologies AG
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Part Data Attributes for IPP65R600C6XKSA1 by Infineon Technologies AG

IPP65R600C6XKSA1
Infineon Technologies AG
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
Package Description
GREEN, PLASTIC, TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Avalanche Energy Rating (Eas)
142 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain-source On Resistance-Max
0.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPP65R600C6XKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
    VS

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