Part Details for IPS50R520CP by Infineon Technologies AG
Overview of IPS50R520CP by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPS50R520CP
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPS50R520 - 500V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6271 |
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$0.5826 / $0.6854 | Buy Now |
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Chip1Cloud | LOW POWER_LEGACY | 9540 |
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RFQ | |
DISTI #
1664076
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Farnell | MOSFET, N, TO-251 RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each | 0 |
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$0.8287 / $0.9292 | Buy Now |
Part Details for IPS50R520CP
IPS50R520CP CAD Models
IPS50R520CP Part Data Attributes:
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IPS50R520CP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPS50R520CP
Infineon Technologies AG
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC, TO-251, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-251 | |
Package Description | GREEN, PLASTIC, TO-251, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Avalanche Energy Rating (Eas) | 166 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 7.1 A | |
Drain-source On Resistance-Max | 0.52 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 66 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPS50R520CP
This table gives cross-reference parts and alternative options found for IPS50R520CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPS50R520CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STD9NM50N | N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in DPAK | STMicroelectronics | IPS50R520CP vs STD9NM50N |
IPS50R520CPBKMA1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC, TO-251, 3 PIN | Infineon Technologies AG | IPS50R520CP vs IPS50R520CPBKMA1 |
IPP50R520CPHKSA1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPS50R520CP vs IPP50R520CPHKSA1 |
STD9NM50N-1 | 7.5A, 500V, 0.56ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | IPS50R520CP vs STD9NM50N-1 |