Part Details for IPS65R1K0CEAKMA2 by Infineon Technologies AG
Overview of IPS65R1K0CEAKMA2 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPS65R1K0CEAKMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPS65R1K0CE - Consumer RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 10107 |
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$0.2772 / $0.3261 | Buy Now |
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Ameya Holding Limited | Min Qty: 50 | 1450 |
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$0.8855 | Buy Now |
Part Details for IPS65R1K0CEAKMA2
IPS65R1K0CEAKMA2 CAD Models
IPS65R1K0CEAKMA2 Part Data Attributes
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IPS65R1K0CEAKMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPS65R1K0CEAKMA2
Infineon Technologies AG
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 7.2 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPS65R1K0CEAKMA2
This table gives cross-reference parts and alternative options found for IPS65R1K0CEAKMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPS65R1K0CEAKMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPS65R1K0CE | Power Field-Effect Transistor, 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Infineon Technologies AG | IPS65R1K0CEAKMA2 vs IPS65R1K0CE |