Part Details for IPS65R650CEAKMA1 by Infineon Technologies AG
Overview of IPS65R650CEAKMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPS65R650CEAKMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPS65R650CEAKMA1
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Avnet Americas | 650V and 700V CoolMOS N-Channel Power MOSFET - Rail/Tube (Alt: IPS65R650CEAKMA1) RoHS: Compliant Min Qty: 790 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 22500 Partner Stock |
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$0.3737 / $0.4616 | Buy Now |
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Rochester Electronics | IPS65R650 - 650V and 700V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 22500 |
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$0.3924 / $0.4616 | Buy Now |
Part Details for IPS65R650CEAKMA1
IPS65R650CEAKMA1 CAD Models
IPS65R650CEAKMA1 Part Data Attributes
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IPS65R650CEAKMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPS65R650CEAKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 142 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |