Part Details for IPS70R2K0CE by Infineon Technologies AG
Overview of IPS70R2K0CE by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPS70R2K0CE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TMOS1442
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Rutronik | N-CH 700V 4A 2000mOhm TO251-3 RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Container: Tube |
Stock DE - 1500 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.2043 / $0.2649 | Buy Now |
Part Details for IPS70R2K0CE
IPS70R2K0CE CAD Models
IPS70R2K0CE Part Data Attributes:
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IPS70R2K0CE
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPS70R2K0CE
Infineon Technologies AG
Power Field-Effect Transistor, 700V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 700 V | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6.3 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |