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Part Details for IPT007N06N by Infineon Technologies AG
Results Overview of IPT007N06N by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IPT007N06N Information
IPT007N06N by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPT007N06N
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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LCSC | 60V 300A 375W 0.75m10V150A 2.8V280uA 1 N-channel HSOF-8-1 MOSFETs ROHS | 1333 |
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$2.3940 / $4.3687 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R / Metal Oxide Semiconductor Field Effect Transistor | 28900 |
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$1.6225 / $2.0957 | Buy Now |
Part Details for IPT007N06N
IPT007N06N CAD Models
IPT007N06N Part Data Attributes
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IPT007N06N
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPT007N06N
Infineon Technologies AG
Power Field-Effect Transistor, 52A I(D), 60V, 0.00075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, HSOF-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HSOF-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.00075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1200 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |