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Power Field-Effect Transistor, 52A I(D), 80V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68AK5332
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Newark | Mosfet, N-Ch, 80V, 169A, Pg-Hsof Rohs Compliant: Yes |Infineon IPT029N08N5ATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1623 |
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$2.0500 / $3.9600 | Buy Now |
DISTI #
86AK5278
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Newark | Mosfet, N-Ch, 80V, 169A, Hsof Rohs Compliant: Yes |Infineon IPT029N08N5ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.9300 | Buy Now |
DISTI #
IPT029N08N5ATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 52A/169A HSOF-8 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$1.8566 / $3.8100 | Buy Now |
DISTI #
IPT029N08N5ATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPT029N08N5ATMA1) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.9238 / $2.3512 | Buy Now |
DISTI #
726-IPT029N08N5ATMA1
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Mouser Electronics | MOSFET MV POWER MOS RoHS: Compliant | 3314 |
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$1.7800 / $3.8100 | Buy Now |
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Future Electronics | OptiMOS 5 RoHS: Non Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$1.8200 | Buy Now |
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Future Electronics | OptiMOS 5 RoHS: Non Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$1.8200 | Buy Now |
DISTI #
79931297
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Verical | Trans MOSFET N-CH 80V 52A 9-Pin(8+Tab) HSOF T/R Min Qty: 8 Package Multiple: 1 Date Code: 2350 | Americas - 2000 |
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$2.2000 / $4.4125 | Buy Now |
DISTI #
IPT029N08N5ATMA1
|
Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPT029N08N5ATMA1) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.9238 / $2.3512 | Buy Now |
DISTI #
IPT029N08N5
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TME | Transistor: N-MOSFET, unipolar, 80V, 120A, Idm: 676A, 167W Min Qty: 1 | 0 |
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$2.5200 / $3.5300 | RFQ |
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IPT029N08N5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPT029N08N5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 52A I(D), 80V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HSOF-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 124 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 52 A | |
Drain-source On Resistance-Max | 0.0029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 676 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |