Part Details for IPU60R1K4C6BKMA1 by Infineon Technologies AG
Overview of IPU60R1K4C6BKMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPU60R1K4C6BKMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPU60R1K4C6BKMA1-ND
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DigiKey | MOSFET N-CH 600V 3.2A TO251-3 Min Qty: 831 Lead time: 39 Weeks Container: Bulk MARKETPLACE PRODUCT |
27000 In Stock |
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$0.3600 | Buy Now |
DISTI #
IPU60R1K4C6BKMA1
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Avnet Americas | Trans MOSFET N-CH 650V 3.2A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU60R1K4C6BKMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 27000 Partner Stock |
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$0.2952 / $0.3646 | Buy Now |
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Rochester Electronics | IPU60R1K4 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 14766 |
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$0.3099 / $0.3646 | Buy Now |
Part Details for IPU60R1K4C6BKMA1
IPU60R1K4C6BKMA1 CAD Models
IPU60R1K4C6BKMA1 Part Data Attributes
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IPU60R1K4C6BKMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPU60R1K4C6BKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-251AA | |
Package Description | GREEN, PLASTIC, TO-251, IPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 26 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |