Part Details for IPU60R2K1CEBKMA1 by Infineon Technologies AG
Overview of IPU60R2K1CEBKMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPU60R2K1CEBKMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPU60R2K1 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6512 |
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$0.1363 / $0.1604 | Buy Now |
Part Details for IPU60R2K1CEBKMA1
IPU60R2K1CEBKMA1 CAD Models
IPU60R2K1CEBKMA1 Part Data Attributes
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IPU60R2K1CEBKMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPU60R2K1CEBKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IPAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain-source On Resistance-Max | 2.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPU60R2K1CEBKMA1
This table gives cross-reference parts and alternative options found for IPU60R2K1CEBKMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPU60R2K1CEBKMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPU60R2K1CE | Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Infineon Technologies AG | IPU60R2K1CEBKMA1 vs IPU60R2K1CE |